HYB25L256160AF Datasheet, PDF (25/56 Pages) Infineon Technologies AG – 256MBit Mobile-RAM

HY[B/E]25L256160AF–7.5
256MBit Mobile-RAM
Electrical Characteristics
Table 12 I_DD6 Programmable Self Refresh Current¹⁾²⁾
Parameter
Symbol –8 Unit T_CASE
max.
TCSR³⁾
Self refresh current
I_DD6
Self refresh mode,
full array activations = all banks
t.b.d.
250
475
µA max. 15°C
µA max. 45°C
µA max. 70°C
725
µA max. 85°C
Self refresh current
I_DD6
Self refresh mode,
half array activations = bank 0 + 1
t.b.d.
150
250
µA max. 15°C
µA max. 45°C
µA max. 70°C
450
µA max. 85°C
Self refresh current
I_DD6
Self refresh mode,
quarter array activations = bank 0
t.b.d.
100
150
µA max. 15°C
µA max. 45°C
µA max. 70°C
275
µA max. 85°C
Note/ Test Condition
t_CK =infinity,
CKE = 0.2 V ⁴⁾
t_CK =infinity,
CKE = 0.2 V ⁴⁾
t_CK =infinity,
CKE = 0.2 V ⁴⁾
1) Recommended operating conditions unless otherwise noted
2) For proper power-up see the operation section of this data sheet.
3) Extended Mode Register A4-A3, see “Temperature Compensated Self Refresh with On-Chip Temperature Sensor”
on Page 15
4) Target values to be verified on final product and may change.
Data Sheet
25
Rev. 1.2, 04-2004