HYB25L256160AF Datasheet, PDF (32/56 Pages) Infineon Technologies AG – 256MBit Mobile-RAM

Burst Write and Read with Auto Precharge
(Burst Length = 2, CAS latency = 2, 3 )
HY[B/E]25L256160AF–7.5
256MBit Mobile-RAM
Timing Diagrams
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
CAS Latency = 2:
Com m and
Bank A
A c tiv e
D Q 's
CAS Latency = 3:
Com m and
Bank A
A c tiv e
D Q 's
NOP
W rite A
Auto Precharge
NOP
NOP
t_WR
DIN A0 DIN A1
NOP
*
NOP
t_RP
A c tiv a te
NOP
NOP
NOP
W rite A
Auto Precharge
NOP
NOP
t_WR
DIN A0 DIN A1
NOP
*
NOP
t_RP
NOP
A c tiv a te
* ^{Begin Auto Precharge}
Bank can be reactivated after trp
SPT03909_2
Figure 14 Burst Write with Auto-Precharge
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
C om m and
Read A
w ith AP
NOP
CAS
latency = 2
D Q's
CAS
latency = 3
D Q's
NOP NOP NOP NOP NOP
*
t_RP
DOUT A0 DOUT A1 DOUT A2 DOUT A3
NOP
DOUT A0
*
DOUT A1 DOUT A2
t_RP
DOUT A3
* ^{Begin Auto Precharge}
Bank can be reactivated after trp
NOP
SPT03721_2
Figure 15 Burst Read with Auto-Precharge
Data Sheet
32
Rev. 1.2, 04-2004