HYB25L256160AF Datasheet, PDF (24/56 Pages) Infineon Technologies AG – 256MBit Mobile-RAM

HY[B/E]25L256160AF–7.5
256MBit Mobile-RAM
Electrical Characteristics
4.3
Current Specification
Table 11 I_DD Specification and Conditions¹⁾²⁾
Parameter
Symbol
–7.5
Unit Note/ Test Condition
typ. max.
Operating current
Single bank access cycles
I_DD1
—
65
mA t_RC = t_RC,MIN ³⁾
Precharge standby current
Power down mode
I_DD2P
—
0.6
Precharge standby current
Non power down mode
I_DD2N
—
20
Non operating current
Active state of 1 upto 4 banks, power down
I_DD3P
—
3.5
Non operating current
I_DD3N
—
25
Active state of 1 upto 4 banks, non power down
Burst operating current
Read command cycling
I_DD4
—
80
mA CS = V_IH,MIN,
CKE ≤ V_IL,MAX ³⁾
mA CS = V_IH,MIN,
CKE ≥ V_IH,MIN ³⁾
mA CS = V_IH,MIN,
CKE ≤ V_IL,MAX ³⁾
mA CS = V_IH,MIN,
CKE ≥ V_IH,MIN ³⁾
mA ³⁾⁴⁾
Auto refresh current
Auto refresh command cycling
I_DD5
—
155
mA t_RC = t_RC,MIN
Self refresh current
I_DD6
see Table 12 µA t_CK =infinity,
CKE = 0.2 V
Deep power down mode current
I_DD7
—
5
µA
1) 0 °C ≤ T_C ≤ 70 °C (comm.) and –25 °C ≤ T_CASE ≤ +85 °C; recommended operating conditions unless otherwise noted
2) For proper power-up see the operation section of this data sheet.
3) These parameters depend on the frequency. These values are measured at 133MHz for –7.5 and at 100MHz for –8 parts.
Input signals are changed once during t_CK. If the devices are operating at a frequency less than the maximum operation
frequency, these current values are reduced.
4) These parameters are measured with continuous data stream during read access and all DQs toggling. CL = 3 and BL = 4
is used and the V_DDQ current is excluded.
Data Sheet
24
Rev. 1.2, 04-2004