HYB25L256160AF Datasheet, PDF (22/56 Pages) Infineon Technologies AG – 256MBit Mobile-RAM

HY[B/E]25L256160AF–7.5
256MBit Mobile-RAM
Electrical Characteristics
Table 9 Input and Output Capacitances
Parameter
Input Capacitance: CLK
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQ
Symbol
C_I1
C_I2
C_IO
Values
min. typ. max.
–
– 3.5
–
– 3.8
4.0 – 5.0
Unit
pF
pF
pF
Note/
Test Condition
1)
1)
1)
1) These values are guaranteed by design and are tested on a sample base only. V_DDQ = V_DD = 2.5 V ± 0.2 V, f = 1 MHz,
T_CASE = 25 °C, V_OUT(DC) = V_DDQ/2, V_OUT (Peak to Peak) 0.2 V. Unused pins are tied to ground.
4.2
Timing Characteristics
Table 10 AC Timing Characteristics¹⁾²⁾
Parameter
Clock
DQ output access time from CLK
CK high-level width
CK low-level width
Clock cycle time
Clock frequency
Setup and Hold Times
Input setup time
Input hold time
CKE setup time
CKE hold time
Mode register setup time
Power down moder entry time
Common Parameters
Active to Read or Write delay
Precharge command period
Active to Precharge command
Active bank A to Active bank A period
Active bank A to Active bank B delay
CAS to CAS command delay
Symbol
t_AC3
t_AC2
t_CH
t_CL
t_CK3
t_CK2
f_CK3
f_CK2
t_IS
t_IH
t_CKS
t_CKH
t_RSC
t_SB
t_RCD
t_RP
t_RAS
t_RC
t_RRD
t_CCD
–7.5
min. max.
Unit Note/ Test Condition
–
7.5
–
6
–
5.4
–
7.5
–
6
2.5 –
2.5 –
7.5 –
8
–
9.5 –
–
133
–
125
–
105
ns V_DDQ < 2.3 V ^3)4)5)8)
ns V_DDQ ≥ 2.3 V ^3)4)5)8)
ns V_DDQ ≥ 3.0 V ^3)4)5)8)
ns V_DDQ < 2.3 V ^3)4)5)8)
ns V_DDQ ≥ 2.3 V ^3)4)5)8)
ns –
ns –
ns V_DDQ ≥ 2.3 V ³⁾
ns V_DDQ < 2.3 V ³⁾
ns ³⁾
MHz
MHz
MHz
V_DDQ ≥ 2.3 V ³⁾
V_DDQ < 2.3 V ³⁾
3)
1.5 –
0.8 –
1.5 –
0.8 –
2
–
0
7.5
ns ⁶⁾
ns ⁶⁾
ns ⁶⁾
ns ⁶⁾
t_CK –
ns –
19
–
ns ⁷⁾
19
–
ns ⁷⁾
45
100000 ns ⁷⁾
67
–
ns ⁷⁾
15
–
ns ⁷⁾
1
–
t_CK –
Data Sheet
22
Rev. 1.2, 04-2004