BFP640ESD_12 Datasheet, PDF (5/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP640ESD
List of Figures
List of Figures
Figure 4-1 Total Power Dissipation P_tot = f (T_s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP640ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage I_C = f (V_CE), I_B = Parameter in µA. . . . . . . . . . . . . 17
Figure 5-3 DC Current Gain h_FE = f (I_C), V_CE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 5-4 Collector Current vs. Base Emitter Voltage I_C = f (V_BE), V_CE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5-5 Base Current vs. Base Emitter Forward Voltage I_B = f (V_BE), V_CE = 2 V . . . . . . . . . . . . . . . . . . . . 18
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage I_B = f (V_EB), V_CE = 2 V . . . . . . . . . . . . . . . . . . . . 19
Figure 5-7 Transition Frequency f_T = f (I_C), f = 1 GHz, V_CE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-8 3rd Order Intercept Point OIP₃ = f (I_C), Z_S = Z_L= 50 Ω, V_CE, f = Parameters . . . . . . . . . . . . . . . . . 20
Figure 5-9 Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-10 Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 3 V, I_C = 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-11 Maximum Power Gain G_max = f (I_C), V_CE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 22
Figure 5-12 Maximum Power Gain G_max = f (V_CE), I_C = 30 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 22
Figure 5-13 Input Matching S₁₁ = f (f), V_CE = 3 V, I_C = 6 / 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-14 Source Impedance for Minimum Noise Figure Z_opt = f (f), V_CE = 3 V, I_C = 6 / 30 mA . . . . . . . . . . . 23
Figure 5-15 Output Matching S₂₂ = f (f), V_CE = 3 V, I_C = 6 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-16 Noise Figure NF_min = f (f), V_CE = 3 V, I_C = 6 / 30 mA, Z_S = Z_opt . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-17 Noise Figure NF_min = f (I_C), V_CE = 3 V, Z_S = Z_opt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 25
Figure 5-18 Noise Figure NF₅₀ = f (I_C), V_CE = 3 V, Z_S = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 25
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-3 Marking Description (Marking BFP640ESD: T4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
5
Revision 1.1, 2012-09-17