BFP640ESD_12 Datasheet, PDF (22/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP640ESD
Electrical Characteristics
42
0.15GHz
39
36
0.45GHz
33
30
0.90GHz
27
1.50GHz
24
1.90GHz
21
2.40GHz
18
3.50GHz
15
5.50GHz
12
10.00GHz
9
6
3
0
0
10
20
30
40
50
60
I_C [mA]
Figure 5-11 Maximum Power Gain G_max = f (I_C), V_CE = 3 V, f = Parameter in GHz
42
39
0.15GHz
36
0.45GHz
33
30
0.90GHz
27
1.50GHz
24
1.90GHz
2.40GHz
21
3.50GHz
18
15
5.50GHz
12
10.00GHz
9
6
3
0
0
1
2
3
4
5
V_CE [V]
Figure 5-12 Maximum Power Gain G_max = f (V_CE), I_C = 30 mA, f = Parameter in GHz
Data Sheet
22
Revision 1.1, 2012-09-17