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BFP640ESD_12 Datasheet, PDF (12/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor | |||
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BFP640ESD
5.3
Frequency Dependent AC Characteristics
Electrical Characteristics
Measurement setup is a test fixture with Bias Tâs in a 50 ⦠system, TA = 25 °C
Top View
E
C
VC
Bias -T
OUT
VB
B
E
Bias-T
(Pin 1)
IN
Figure 5-1 BFP640ESD Testing Circuit
Table 5-3 AC Characteristics, VCE = 3 V, f = 150 MHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
Gms
â
Gms
â
Low noise operation point
High linearity operation point
Minimum noise figure
S21
â
S21
â
Minimum noise figure
Associated gain
Linearity
NFmin
â
Gass
â
1 dB gain compression point
3rd order intercept point
OP1dB
â
OIP3
â
Values
Typ. Max.
34
â
39.5 â
25
â
35
â
0.6
â
30
â
11
â
25
â
Unit Note / Test Condition
dB
dB
dB
dBm
IC = 6 mA
IC = 30 mA
ZS = ZL = 50 â¦
IC = 6 mA
IC = 30 mA
ZS = Zopt
IC = 6 mA
IC = 6 mA
ZS = ZL = 50 â¦
IC = 30 mA
IC = 30 mA
Data Sheet
12
Revision 1.1, 2012-09-17
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