BFP640ESD_12 Datasheet, PDF (21/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP640ESD
Electrical Characteristics
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_CB [V]
Figure 5-9 Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz
50
45
40
35
G_ms
30
25
G_ma
20
G_ms
15
10
|S₂₁|²
5
0
0 1 2 3 4 5 6 7 8 9 10
f [GHz]
Figure 5-10 Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 3 V, I_C = 30 mA
Data Sheet
21
Revision 1.1, 2012-09-17