BFP640ESD_12 Datasheet, PDF (16/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP640ESD
Electrical Characteristics
Table 5-10 AC Characteristics, V_CE = 3 V, f = 5.5 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
G_ma
–
G_ma
–
Low noise operation point
High linearity operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
14
–
14.5 –
11
–
12.5 –
1.05 –
11.5 –
12.5 –
26
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 6 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 6 mA
I_C = 30 mA
Z_S = Z_opt
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 30 mA
Table 5-11 AC Characteristics, V_CE = 3 V, f = 10 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
G_ms
–
G_ms
–
Low noise operation point
High linearity operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
10
–
10.5 –
4.5
–
6
–
2
–
7
–
11
–
25.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 6 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 6 mA
I_C = 30 mA
Z_S = Z_opt
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 30 mA
Notes
1. G_ms = IS₂₁ / S₁₂I for k < 1; G_ma = IS₂₁ / S₁₂ I(k-(k²-1)^1/2) for k > 1.
2. In order to get the NF_min values stated in this chapter the test fixture losses have been subtracted from all
measured result.
3. OIP₃ value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
16
Revision 1.1, 2012-09-17