BFP640ESD_12 Datasheet, PDF (10/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

4
Thermal Characteristics
BFP640ESD
Thermal Characteristics
Table 4-1 Thermal Resistance
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
Junction - soldering point¹⁾ R_thJS
–
310
–
K/W –
1)For the definition of R_thJS please refer to Application Note AN077 (Thermal Resistance Calculation).
250
200
150
100
50
0
0
25
50
75
100
125
150
T_S [°C]
Figure 4-1 Total Power Dissipation P_tot = f (T_s)
Data Sheet
10
Revision 1.1, 2012-09-17