BFP640ESD_12 Datasheet, PDF (20/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

5.5
Characteristic AC Diagrams
BFP640ESD
Electrical Characteristics
50
45
4.00V
40
3.00V
35
2.50V
30
25
20
2.00V
15
10
5
1.00V
0
0
10
20
30
40
50
60
I_C [mA]
Figure 5-7 Transition Frequency f_T = f (I_C), f = 1 GHz, V_CE = Parameter in V
30
25
20
15
10
5
2V, 1.5GHz
3V, 1.5GHz
2V, 2.4GHz
0
3V, 2.4GHz
−5
0
10
20
30
40
50
I [mA]
C
Figure 5-8 3rd Order Intercept Point OIP₃ = f (I_C), Z_S = Z_L= 50 Ω, V_CE, f = Parameters
Data Sheet
20
Revision 1.1, 2012-09-17