BFP640ESD_12 Datasheet, PDF (11/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

5
Electrical Characteristics
BFP640ESD
Electrical Characteristics
5.1
DC Characteristics
Table 5-1 DC Characteristics at T_A = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage V_(BR)CEO
Min.
4.1
Collector emitter leakage current
I_CES
–
Collector base leakage current
I_CBO
–
Emitter base leakage current
I_EBO
–
DC current gain
h_FE
110
Values
Typ. Max.
4.7
–
–
500
–
500
–
10
180 270
Unit Note / Test Condition
V
I_C = 1 mA, I_B = 0
Open base
nA V_CE = 2 V, V_BE = 0
E-B short circuited
nA V_CB = 2 V, I_E = 0
Open emitter
μA V_EB = 0.5 V, I_C = 0
Open collector
V_CE = 3 V, I_C = 30 mA
Pulse measured
5.2
General AC Characteristics
Table 5-2 General AC Characteristics at T_A = 25 °C
Parameter
Symbol
Min.
Transition frequency
f_T
–
Collector base capacitance
C_CB
–
Collector emitter capacitance
C_CE
–
Emitter base capacitance
C_EB
–
Values
Typ. Max.
45
–
0.08 –
0.4
–
0.7
–
Unit Note / Test Condition
GHz
pF
pF
pF
V_CE = 3 V, I_C = 30 mA,
f = 1 GHz
V_CB = 3 V, V_BE = 0 V
f = 1 MHz
Emitter grounded
V_CE = 3 V, V_BE = 0 V
f = 1 MHz
Base grounded
V_EB = 0.4 V, V_CB = 0 V
f = 1 MHz
Collector grounded
Data Sheet
11
Revision 1.1, 2012-09-17