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BFP640ESD_12 Datasheet, PDF (14/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor | |||
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BFP640ESD
Electrical Characteristics
Table 5-6 AC Characteristics, VCE = 3 V, f = 1.5 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
Gms
â
Gms
â
Low noise operation point
High linearity operation point
Minimum noise figure
S21
â
S21
â
Minimum noise figure
Associated gain
Linearity
NFmin
â
Gass
â
1 dB gain compression point
3rd order intercept point
OP1dB
â
OIP3
â
Values
Typ. Max.
23.5 â
26.5 â
21
â
24
â
0.65 â
23.5 â
12
â
26.5 â
Unit Note / Test Condition
dB
dB
dB
dBm
IC = 6 mA
IC = 30 mA
ZS = ZL = 50 â¦
IC = 6 mA
IC = 30 mA
ZS = Zopt
IC = 6 mA
IC = 6 mA
ZS = ZL = 50 â¦
IC = 30 mA
IC = 30 mA
Table 5-7 AC Characteristics, VCE = 3 V, f = 1.9 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
Gms
â
Gms
â
Low noise operation point
High linearity operation point
Minimum noise figure
S21
â
S21
â
Minimum noise figure
Associated gain
Linearity
NFmin
â
Gass
â
1 dB gain compression point
3rd order intercept point
OP1dB
â
OIP3
â
Values
Typ. Max.
22.5 â
25
â
19.5 â
22
â
0.65 â
22
â
12
â
27
â
Unit Note / Test Condition
dB
dB
dB
dBm
IC = 6 mA
IC = 30 mA
ZS = ZL = 50 â¦
IC = 6 mA
IC = 30 mA
ZS = Zopt
IC = 6 mA
IC = 6 mA
ZS = ZL = 50 â¦
IC = 30 mA
IC = 30 mA
Data Sheet
14
Revision 1.1, 2012-09-17
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