BFP640ESD_12 Datasheet, PDF (13/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP640ESD
Electrical Characteristics
Table 5-4 AC Characteristics, V_CE = 3 V, f = 450 MHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
G_ms
–
G_ms
–
Low noise operation point
High linearity operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
29
–
34.5 –
24.5 –
32
–
0.6
–
28.5 –
11
–
25
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 6 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 6 mA
I_C = 30 mA
Z_S = Z_opt
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50Ω
I_C = 30 mA
I_C = 30 mA
Table 5-5 AC Characteristics, V_CE = 3 V, f = 900 MHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
G_ms
–
G_ms
–
Low noise operation point
High linearity operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
26
–
30.5 –
23.5 –
28
–
0.6
–
26
–
11.5 –
26
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 6 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 6 mA
I_C = 30 mA
Z_S = Z_opt
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 30 mA
Data Sheet
13
Revision 1.1, 2012-09-17