BFP640ESD_12 Datasheet, PDF (19/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP640ESD
Electrical Characteristics
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
0.2
0.3
0.4
0.5
0.6
V_EB [V]
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage I_B = f (V_EB), V_CE = 2 V
Data Sheet
19
Revision 1.1, 2012-09-17