BFP640ESD_12 Datasheet, PDF (25/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP640ESD
Electrical Characteristics
4
3.5
3
2.5
2
1.5
1
f = 10GHz
f = 5.5GHz
f = 2.4GHz
0.5
f = 1.9GHz
f = 0.9GHz
f = 0.45GHz
0
0
10
20
30
40
50
I_c [mA]
Figure 5-17 Noise Figure NF_min = f (I_C), V_CE = 3 V, Z_S = Z_opt, f = Parameter in GHz
5
4.5
4
3.5
3
2.5
2
1.5
f = 10GHz
1
f = 5.5GHz
f = 2.4GHz
0.5
f = 1.9GHz
f = 0.9GHz
f = 0.45GHz
0
0
10
20
30
40
50
I_c [mA]
Figure 5-18 Noise Figure NF₅₀ = f (I_C), V_CE = 3 V, Z_S = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. T_A = 25°C.
Data Sheet
25
Revision 1.1, 2012-09-17