BFP640ESD_12 Datasheet, PDF (27/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

7
Package Information SOT343
BFP640ESD
Package Information SOT343
2 ±0.2
1.3
4
3
1
0.3
+0.1
-0.05
4x
0.1 M
Figure 7-1 Package Outline
0.15
2
0.6
+0.1
-0.05
0.6
0.9 ±0.1
0.1 MAX.
0.1
A
0.15
+0.1
-0.05
0.2 M A
SOT343-PO V08
Figure 7-2 Package Footprint
1.15
0.9
SOT343-FP V08
Date code (YM)
2005, June
Type code
XYs ^Manufacturer
Pin 1
Figure 7-3 Marking Description (Marking BFP640ESD: T4s)
4
0.2
Pin 1
2.15
Figure 7-4 Tape Dimensions
1.1
SOT323-TP V02
Data Sheet
27
Revision 1.1, 2012-09-17