BFP640ESD_12 Datasheet, PDF (23/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP640ESD
Electrical Characteristics
1
1.5
0.5
0.4
0.3
0.2
0.1
10
2
9
10
8
9
7
8
7
6
6
5
5
4
0.03 to 10 GHz
4
3
0
0.1 0.2 0.3 0.4 0.5
1 1.5 2 3 4 5
2
3
4
5
10
−0.1
3
1
−10
−0.2
−0.3
−0.4
−0.5
2
−1
−5
−4
−3
1
−2
−1.5
Figure 5-13 Input Matching S₁₁ = f (f), V_CE = 3 V, I_C = 6 / 30 mA
30 mA
6 mA
0.5
0.4
0.3
1.9GHz
0.2
0.1 ^2.4GHz
0
0.1 0.2 0.3 0.4 0.5
−0.1
−0.2 ^5.5GHz
−0.3
−0.4
−0.5
1
1.5
2
0.9GHz
3
4
5
0.45GHz ₁₀
1 1.5 2 3 4 5
I_c = 30mA
I_c = 6.0mA
−10
−5
−4
−3
10GHz
−2
−1.5
−1
Figure 5-14 Source Impedance for Minimum Noise Figure Z_opt = f (f), V_CE = 3 V, I_C = 6 / 30 mA
Data Sheet
23
Revision 1.1, 2012-09-17