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TLE75080-EMH Datasheet, PDF (16/80 Pages) Infineon Technologies AG – SPI Driver for Enhanced Relay Control
TLE75080-EMH
General Product Characteristics
Table 2 Absolute Maximum Ratings (cont’d)1)
TJ = -40 °C to +150 °C
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Voltage ranges specifed for VS apply also to VS1 and VS2 (unless otherwise specified)
Parameter
Symbol
Values
Unit Note /
Min. Typ. Max.
Test Condition
Maximum energy dissipation
EAR
–
– 10
mJ
4)
repetitive pulses - IL(EAR)
TJ(0) = 85 °C
IL(0) = IL(EAR)
2*106 cycles
IDLE pin
Voltage at IDLE pin
Current through IDLE pin
Current through IDLE pin
Input Pins
VIDLE
IIDLE
IIDLE
-0.3
-0.75
-10.0
5.5
V
–
0.75 mA –
2.0
mA t ≤ 2 min.
Voltage at input pins
VIN
Current through input pins
IIN
Current through input pins
IIN
SPI Pins
-0.3
-0.75
-10.0
5.5
V
–
0.75 mA –
2.0
mA t ≤ 2 min.
Voltage at chip select pin
Current through chip select pin
Current through chip select pin
Voltage at serial clock pin
Current through serial clock pin
Current through serial clock pin
Voltage at serial input pin
Current through serial input pin
Current through serial input pin
Voltage at serial output pin SO
Current through serial output pin
SO
VCSN
ICSN
ICSN
VSCLK
ISCLK
ISCLK
VSI
ISI
ISI
VSO
ISO
-0.3
-0.75
-10.0
-0.3
-0.75
-10.0
-0.3
-0.75
-10.0
-0.3
-0.75
5.5
V
0.75 mA
2.0
mA
5.5
V
0.75 mA
2.0
mA
5.5
V
0.75 mA
2.0
mA
VDD+0.3 V
0.75 mA
–
–
t ≤ 2 min.
–
t ≤ 2 min.
–
t ≤ 2 min.
Current through serial output pin ISO
-2.0
SO
10.0 mA t ≤ 2 min.
Temperatures
Junction Temperature
Storage Temperature
ESD Susceptibility
TJ
-40
– 150
°C –
Tstg
-55
– 150
°C –
ESD Susceptibility HBM
OUT pins vs. VS or GND
ESD Susceptibility HBM
other pins
VESD
-4
–4
VESD
-2
–2
kV
5)
HBM
kV
5)
HBM
Number
P_4.1.15
P_4.1.23
P_4.1.25
P_4.1.26
P_4.1.28
P_4.1.30
P_4.1.31
P_4.1.33
P_4.1.34
P_4.1.35
P_4.1.37
P_4.1.38
P_4.1.39
P_4.1.41
P_4.1.42
P_4.1.43
P_4.1.58
P_4.1.45
P_4.1.46
P_4.1.48
P_4.1.49
P_4.1.50
P_4.1.51
Data Sheet
16
Rev. 1.0, 2016-06-22