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TLE75080-EMH Datasheet, PDF (15/80 Pages) Infineon Technologies AG – SPI Driver for Enhanced Relay Control
4
General Product Characteristics
TLE75080-EMH
General Product Characteristics
4.1
Absolute Maximum Ratings
Table 2 Absolute Maximum Ratings 1)
TJ = -40 °C to +150 °C
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Voltage ranges specifed for VS apply also to VS1 and VS2 (unless otherwise specified)
Parameter
Symbol
Values
Unit Note /
Min. Typ. Max.
Test Condition
Number
Supply Voltages
Analog Supply voltage
Digital Supply voltage
Supply voltage for load dump
protection
VS
VDD
VS(LD)
-0.3 – 28
-0.3 – 5.5
–
– 42
V
–
V
–
V
2)
P_4.1.1
P_4.1.2
P_4.1.3
Supply voltage for short circuit VS(SC)
0
protection (single pulse)
– 28
V
–
P_4.1.4
Reverse polarity voltage
-VS(REV) –
– 16
V
3)
P_4.1.5
TJ(0) = 25 °C
t ≤ 2 min
See Chapter 11 for
general setup.
RL = 70 Ω on all
channels
Current through VS pin
Current through VDD pin
Power Stages
IVS
-10
– 10
mA t ≤ 2 min
IVDD
-50
– 10
mA t ≤ 2 min
P_4.1.7
P_4.1.8
Load current
|IL|
–
–
IL(OVL0) A
Voltage at power transistor
VDS
-0.3 – 42
V
Power transistor source voltage VOUT_S -16
–
VOUT_D V
+0.3
single channel
–
–
P_4.1.9
P_4.1.10
P_4.1.11
Power transistor drain voltage VOUT_D VOUT_S – 42
(VOUT_S ≥ 0 V)
-0.3
Power transistor drain voltage VOUT_D -0.3 – 42
(VOUT_S < 0 V)
Maximum energy dissipation
EAS
–
– 50
single pulse
Maximum energy dissipation
EAS
–
– 25
single pulse
V
–
V
–
mJ
4)
TJ(0) = 25 °C
IL(0) = 2*IL(EAR)
mJ
4)
TJ(0) = 150 °C
IL(0) = 400 mA
P_4.1.12
P_4.1.59
P_4.1.13
P_4.1.14
Data Sheet
15
Rev. 1.0, 2016-06-22