English
Language : 

HY29DL162 Datasheet, PDF (48/48 Pages) Hynix Semiconductor – 16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory
HY29DL162/HY29DL163
Important Notice
© 2001 by Hynix Semiconductor America. All rights reserved.
No part of this document may be copied or reproduced in any
form or by any means without the prior written consent of Hynix
Semiconductor Inc. or Hynix Semiconductor America (collec-
tively “Hynix”).
tions of Sale only. Hynix makes no warranty, express, statu-
tory, implied or by description, regarding the information set
forth herein or regarding the freedom of the described devices
from intellectual property infringement. Hynix makes no war-
ranty of merchantability or fitness for any purpose.
The information in this document is subject to change without
notice. Hynix shall not be responsible for any errors that may
appear in this document and makes no commitment to update
or keep current the information contained in this document.
Hynix advises its customers to obtain the latest version of the
device specification to verify, before placing orders, that the
information being relied upon by the customer is current.
Devices sold by Hynix are covered by warranty and patent in-
demnification provisions appearing in Hynix Terms and Condi-
Hynix’s products are not authorized for use as critical compo-
nents in life support devices or systems unless a specific writ-
ten agreement pertaining to such intended use is executed
between the customer and Hynix prior to use. Life support
devices or systems are those which are intended for surgical
implantation into the body, or which sustain life whose failure to
perform, when properly used in accordance with instructions
for use provided in the labeling, can be reasonably expected to
result in significant injury to the user.
Rev.
1.0
1.1
1.2
1.3
Revision Record
Date
Details
5/00 Original issue.
7/00
Corrected description of CFI Query and Reset commands in CFI mode description section.
Minor typographical corrections.
Change to Hynix format.
Removed 'BA' as requirement for several operations in Table 6 and corrected description of Electronic ID Operation
4/01 (High Voltage Method).
Added Bank Address to CFI Query command and changed operational description in CFI section.
Removed high voltage sector group protect/unprotect method and all references to such.
6/01 Changed program and erase parameter values. Corrected error in CFI Table 13.
Memory Sales and Marketing Division
Hynix Semiconductor Inc.
10 Fl., Hynix Youngdong Building
89, Daechi-dong
Kangnam-gu
Seoul, Korea
Telephone: +82-2-580-5000
Fax: +82-2-3459-3990
http://www.hynix.com
48
Flash Memory Business Unit
Hynix Semiconductor America Inc.
3101 North First Street
San Jose, CA 95134
USA
Telephone: (408) 232-8800
Fax: (408) 232-8805
http://www.us.hynix.com
r1.3/June 01