HY29DL162 Datasheet, PDF (41/48 Pages) Hynix Semiconductor – 16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory

AC CHARACTERISTICS
Enter Automatic
Erase
WE#
DQ[6]
Erase
Suspend
Enter Erase
Suspend
Program
Erase
Erase
Suspend
Read
HY29DL162/HY29DL163
Erase
Resume
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Erase
Complete
DQ[2]
Notes:
1. The system may use CE# or OE# to toggle DQ[2] and DQ[6]. DQ[2] toggles only when read at an address within an
erase-suspended sector.
Figure 24. DQ[2] and DQ[6] Operation
Sector Group Protect/Unprotect, Temporary Sector Unprotect, Accelerated Program
Parameter
JEDEC Std
Description
Speed Option
- 70 - 80 - 90 - 12
t_VIDR V_ID Transition Time for Temporary Sector Unprotect ¹ Min
500
t_VHH V_HH Transition Time for Accelerated Programming ¹ Min
250
t_RSP RESET# Setup Time for Temporary Sector Unprotect Min
4
t_RRB RESET# Hold Time for Temporary Sector Unprotect Min
4
t_VRST
RESET# Setup Time for Sector Group Protect and
Unprotect
Min
1
t_PROT
t_UNPR
t_VERW
Sector Group Protect Time
Sector Unprotect Time
Protect/Unprotect Verify Wait Time
Max
150
Max
15
Min
1
Notes:
1. Not 100% tested.
Unit
ns
ns
µs
µs
µs
µs
ms
µs
V _ID
RESET#
V _IL or V_IH
t_VIDR
CE#
t_VIDR
WE#
t_RSP
t_RRB
RY/BY#
r1.3/June 01
Figure 25. Temporary Sector Unprotect Timings
V _IL or V_IH
41