HY29DL162 Datasheet, PDF (47/48 Pages) Hynix Semiconductor – 16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory

HY29DL162/HY29DL163
ORDERING INFORMATION
Hynix products are available in several speeds, packages and operating temperature ranges. The
ordering part number is formed by combining a number of fields, as indicated below. Refer to the ‘Valid
Combinations’ table, which lists the configurations that are planned to be supported in volume. Please
contact your local Hynix representative or distributor to confirm current availability of specific configura-
tions and to determine if additional configurations have been released.
HY29DL16x X X - X X X
SPECIAL INSTRUCTIONS
TEMPERATURE RANGE
Blank = Commercial ( 0 to +70 °C)
I = Industrial (-40 to +85 °C)
SPEED OPTION
70 = 70 ns
80 = 80 ns
90 = 90 ns
12 = 120 ns
PACKAGE TYPE
T = 48-Pin Thin Small Outline Package (TSOP)
F = 48-Ball Fine-Pitch Ball Grid Array (FBGA), 8 x 9 mm
BOOT BLOCK LOCATION
T = Top Boot Block Option
B = Bottom Boot Block Option
VALID COMBINATIONS
DEVICE NUMBER
HY29DL162 = 16 Megabit (2M x 8/1M x 16) CMOS 3 Volt-Only Sector
Erase Flash Memory with 2Mb/14Mb Bank Split
HY29DL163 = 16 Megabit (2M x 8/1M x 16) CMOS 3 Volt-Only Sector
Erase Flash Memory with 4Mb/12Mb Bank Split
Package and Speed
FBGA
TSOP
Temperature
70 ns
80 ns
90 ns
120ns
70 ns
80 ns
90 ns 120ns
Commercial
F-70
F-80
F-90
F-12
T-70
T-80
T-90
T-12
Industrial
F-70I
F-80I
F-90I
F-12I
T-70I
T-80I
T-90I
T-12I
Note:
1. The complete part number is formed by appending the suffix shown in the table to the Device Number. For example, the
part number for a 120 ns, Industrial temperature range, 2Mb/14Mb bank-split device in the TSOP package with the top
boot block option is HY29DL162TT-12I.
2. Please contact your local Hyundai representative or distributor for current product availability.
r1.3/June 01
47