HY29DL162 Datasheet, PDF (45/48 Pages) Hynix Semiconductor – 16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory

HY29DL162/HY29DL163
Latchup Characteristics
Description
Minimum
Maximum
Input voltage with respect to V_SS on all pins except I/O pins
(including A[9], OE# and RESET#)
- 1.0
12.5
Input voltage with respect to V_SS on all I/O pins
- 1.0
V_CC Current
- 100
Notes:
1. Includes all pins except V_CC. Test conditions: V_CC = 1.8 V, one pin at a time.
TSOP Pin Capacitance
V_CC + 1.0
100
Symbol
Parameter
Test Setup
Typ
Max
C_IN Input Capacitance
C_OUT Output Capacitance
C_IN2 Control Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions: T_A = 25 ºC, f = 1.0 MHz.
Data Retention
V_IN = 0
V_OUT = 0
V_IN = 0
6
7.5
8.5
12
7.5
9
Parameter
Test Conditions
Minimum
Minimum Pattern Data Retention Time
150 ºC
10
125 ºC
20
PACKAGE DRAWINGS
Unit
V
V
mA
Unit
pF
pF
pF
Unit
Years
Years
Physical Dimensions
TSOP48 - 48-pin Thin Small Outline Package (measurements in millimeters)
Pin 1 ID
1
0.95
1.05
48
11.90
12.10
0.50 BSC
24
25
18.30
18.50
19.80
20.20
0.05
0.15
1.20
MAX
0.25MM (0.0098") BSC
0.08
0.20
0.10
0^o
0.21
5^o
0.50
0.70
r1.3/June 01
45