HY29DL162 Datasheet, PDF (33/48 Pages) Hynix Semiconductor – 16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory

AC CHARACTERISTICS
HY29DL162/HY29DL163
Read Operations
Parameter
JEDEC Std
Description
t_AVAV
t_RC Read Cycle Time ¹
t_AVQV
t_ACC Address to Output Delay
t_ELQV
t_EHQZ
t_GLQV
t_GHQZ
t_AXQX
t_CE Chip Enable to Output Delay
t_DF Chip Enable to Output High Z ¹
t_OE Output Enable to Output Delay
t_DF Output Enable to Output High Z ¹
t_OEH
Output Enable
Hold Time ¹
Read
Toggle and
Data# Polling
t_OH
Output Hold Time from Addresses, CE#
or OE#, Whichever Occurs First ¹
Test Setup
CE# = V_IL
OE# = V_IL
OE# = V_IL
CE# = V_IL
Min
Max
Max
Max
Max
Max
Min
Min
Min
Speed Option
- 70 - 80 - 90 - 12
70 80 90 120
70 80 90 120
70 80 90 120
30 30 40 50
25 25 30 30
25 25 30 30
0
10
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
1. Not 100% tested.
Addresses
CE#
OE#
WE#
Outputs
t_RC
Addresses Stable
t_ACC
t_OE
t_OEH
t_DF
t_CE
t_OH
Output Valid
RESET#
RY/BY#
0V
Figure 15. Read Operation Timings
r1.3/June 01
33