HY29DL162 Datasheet, PDF (43/48 Pages) Hynix Semiconductor – 16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory

AC CHARACTERISTICS
HY29DL162/HY29DL163
Alternate CE# Controlled Erase/Program Operations
Parameter
JEDEC Std
t_AVAV
t_AVEL
t_ELAX
t_DVEH
t_EHDX
t_GHEL
t_WLEL
t_EHWH
t_ELEH
t_EHEL
t_WC
t_AS
t_AH
t_DS
t_DH
t_GHEL
t_WS
t_WH
t_CP
t_CPH
Description
Write Cycle Time ¹
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
t_WHWH1
Programming Operation ^{1, 2, 3}
t_WHWH1
Accelerated Programming
Operation ^{1, 2, 3} (WP#/ACC = V_HH)
Chip Programming Operation ^{1, 2, 3, 5}
t_WHWH2 t_WHWH2 Sector Erase Operation ^{1, 2, 4}
Speed Option
Unit
- 70 - 80 - 90 - 12
Min 70 80 90 120 ns
Min
0
ns
Min 45 45 45 50 ns
Min 35 35 45 50 ns
Min
0
ns
Min
0
ns
Min
0
ns
Min
0
ns
Min 30 30 45 50 ns
Min
30
ns
Typ
10
µs
Byte Mode
Max
150
µs
Typ
15
µs
Word Mode
Max
210
µs
Byte or ^Typ
10
µs
Word Mode _Max
150
µs
Typ
20
sec
Byte Mode
Max
60
sec
Typ
16
sec
Word Mode
Max
48
sec
Typ
0.5
sec
Max
7.5
sec
t_WHWH3 t_WHWH3 Chip Erase Operation ^{1, 2, 4}
Typ
16
sec
Erase and Program Cycle Endurance ¹
Typ
1,000,000
cycles
Min
100,000
cycles
t_BUSY CE# to RY/BY# Delay
Min
90
ns
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25 °C, V_CC = 3.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90 °C, V = 2.7 volts, 100,000 cycles.
CC
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the Program
command. See Table 10 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes
are programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
bytes program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum
byte program time specified is exceeded. See Write Operation Status section for additional information.
r1.3/June 01
43