GMS81C2112 Datasheet, PDF (19/107 Pages) Hynix Semiconductor – HYNIX SEMICONDUCTOR 8-BIT SINGLE-CHIP MICROCONTROLLERS

GMS81C2112/GMS81C2120
7. ELECTRICAL CHARACTERISTICS
7.1 Absolute Maximum Ratings
Supply voltage ............................................. -0.3 to +7.0 V
Storage Temperature .................................... -40 to +85 °C
Voltage on Normal voltage pin
with respect to Ground (V_SS)
..............................................................-0.3 to V_DD+0.3 V
Voltage on High voltage pin
with respect to Ground (V_SS)
............................................................ -45V to V_DD+0.3 V
Maximum current out of V_SS pin .......................... 150 mA
Maximum current into V_DD pin .............................. 80 mA
Maximum current sunk by (I_OL per I/O Pin) .......... 20 mA
7.2 Recommended Operating Conditions
Maximum output current sourced by (I_OH per I/O Pin)
................................................................................... 8 mA
Maximum current (ΣI_OL) ...................................... 100 mA
Maximum current (ΣI_OH)........................................ 50 mA
Note: Stresses above those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the de-
vice. This is a stress rating only and functional operation of
the device at any other conditions above those indicated in
the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for ex-
tended periods may affect device reliability.
Parameter
Symbol
Supply Voltage
Operating Frequency
Operating Temperature
V_DD
f_XIN
T_OPR
Condition
f_XI = 4.5 MHz
V_DD = V_DD
Specifications
Min.
Max.
2.7
5.5
1
4.5
-40
85
Unit
V
MHz
°C
7.3 A/D Converter Characteristics
(T_A=25°C, V_DD=5V, V_SS=0V, AV_DD=5.12V, AV_SS=0V @f_XIN =4MHz)
Parameter
Symbol Condition
Specifications
Min.
Typ.¹
Max.
Analog Power Supply Input Voltage Range
AV_DD
AV_SS
-
AV_DD
Analog Input Voltage Range
V_AN
AV_SS-0.3
AV_DD+0.3
Current Following
Between AV_DD and AV_SS
I_AVDD
-
-
200
Overall Accuracy
CA_IN
-
-
±2
Non-Linearity Error
N_NLE
-
-
±2
Differential Non-Linearity Error
N_DNLE
-
-
±2
Zero Offset Error
N_ZOE
-
-
±2
Full Scale Error
N_FSE
-
-
±2
Gain Error
N_NLE
-
-
±2
Conversion Time
T_CONV
f_XIN=4MHz
-
-
20
1. Data in “Typ” column is at 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
Unit
V
V
uA
LSB
LSB
LSB
LSB
LSB
LSB
us
JUNE. 2001 Ver 1.00
13