MB81F643242B-10FN-X Datasheet, PDF (26/56 Pages) Fujitsu Component Limited. – MEMORY CMOS 4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM

MB81F643242B-10FN-X Advanced Info (AE0.3E)
s DC CHARACTERISTICS
(At recommended operating conditions unless otherwise noted.) Note *1, *2, and *3
Parameter
Symbol
Condition
Value
Unit
Min. Max.
Output High Voltage
VOH(DC) IOH = –2 mA
2.4
—
V
Output Low Voltage
Input Leakage Current (Any Input)
VOL(DC)
ILI
IOL = 2 mA
0 V ≤ VIN ≤ VCC;
All other pins not under
test = 0 V
—
0.4 V
–5
5
µA
Output Leakage Current
ILO
0 V ≤ VIN ≤ VCC;
Data out disabled
–5
5
µA
Operating Current
(Average Power Supply Current)
Burst: Length = 1
tRC = min, tCK = min
One bank active
ICC1
Output pin open
Addresses changed up to
—
1-time during tRC (min)
0 V ≤ VIN ≤ VIL max
VIH min ≤ VIN ≤ VCC
135 mA
ICC2P
CKE = VIL
All banks idle
tCK = min
Power down mode
0 V ≤ VIN ≤ VIL max
VIH min ≤ VIN ≤ VCC
—
2 mA
Precharge Standby Current
(Power Supply Current)
CKE = VIL
All banks idle
ICC2PS
CLK = VIH or VIL
Power down mode
—
0 V ≤ VIN ≤ VIL max
VIH min ≤ VIN ≤ VCC
CKE = VIH
All banks idle, tCK = 15 ns
NOP commands only,
ICC2N
Input signals (except to
CMD) are changed 1 time
—
during 30 ns
0 V ≤ VIN ≤ VIL max
VIH min ≤ VIN ≤ VCC
1 mA
12 mA
ICC2NS
CKE = VIH
All banks idle
CLK = VIH or VIL
Input signal are stable
0 V ≤ VIN ≤ VIL max
VIH min ≤ VIN ≤ VCC
—
2 mA
(Continued)
26