MB81F643242B-10FN-X Datasheet, PDF (1/56 Pages) Fujitsu Component Limited. – MEMORY CMOS 4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM

FUJITSU SEMICONDUCTOR
DATA SHEET
AE0.3E
MEMORY
CMOS
4 × 512 K × 32 BIT
SYNCHRONOUS DYNAMIC RAM
MB81F643242B-10FN-X
CMOS 4-Bank × 524,288-Word × 32 Bit
Synchronous Dynamic Random Access Memory
s DESCRIPTION
The Fujitsu MB81F643242B is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing
67,108,864 memory cells accessible in a 32-bit format. The MB81F643242B features a fully synchronous
operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which
enables high performance and simple user interface coexistence. The MB81F643242B SDRAM is designed to
reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing
constraints, and may improve data bandwidth of memory as much as 5 times more than a conventional DRAM.
The MB81F643242B is ideally suited for workstations, personal computers, laser printers, high resolution graphic
adapters/accelerators and other applications where an extremely large memory and bandwidth are required and
where a simple interface is needed.
s PRODUCT LINE & FEATURES
Parameter
CL - tRCD - tRP@ 66 MHz
Clock Frequency
Burst Mode Cycle Time
Access Time from Clock
Operating Current
Power Down Mode Current (ICC2P)
Self Refresh Current (ICC6)
CL = 3
CL = 3
CL = 3
MB81F643242B-10FN-X
3 - 3 - 3 clk min.
100 MHz max.
10 ns min.
7 ns max.
105 mA max.
2 mA max.
2 mA max.
• Single +3.3 V Supply ±0.3 V tolerance
• LVTTL compatible I/O interface
• 4 K refresh cycles every 16 ms
• Four bank operation
• Burst read/write operation and burst
read/single write operation capability
• Programmable burst type, burst length, and
CAS latency
• Auto-refresh (every 3.9 µs)
• CKE power down mode
• Output Enable and Input Data Mask