K60P144M100SF2V2 Datasheet, PDF (36/80 Pages) Freescale Semiconductor, Inc – K60 Sub-Family

Peripheral operating requirements and behaviors
The bytes not assigned to data flash via the FlexNVM partition code are used by the flash
memory module to obtain an effective endurance increase for the EEPROM data. The
built-in EEPROM record management system raises the number of program/erase cycles
that can be attained prior to device wear-out by cycling the EEPROM data through a
larger EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
EEPROM – 2 × EEESPLIT × EEESIZE
EEESPLIT × EEESIZE
× Write_efficiency × n_nvmcycd
where
• Writes_subsystem — minimum number of writes to each FlexRAM location for
subsystem (each subsystem can have different endurance)
• EEPROM — allocated FlexNVM for each EEPROM subsystem based on DEPART;
entered with the Program Partition command
• EEESPLIT — FlexRAM split factor for subsystem; entered with the Program
Partition command
• EEESIZE — allocated FlexRAM based on DEPART; entered with the Program
Partition command
• Write_efficiency —
• 0.25 for 8-bit writes to FlexRAM
• 0.50 for 16-bit or 32-bit writes to FlexRAM
• n_nvmcycd — data flash cycling endurance (the following graph assumes 10,000
cycles)
K60 Sub-Family Data Sheet, Rev. 1, 6/2012.
36
Preliminary
Freescale Semiconductor, Inc.
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