K60P144M100SF2V2 Datasheet, PDF (34/80 Pages) Freescale Semiconductor, Inc – K60 Sub-Family

Peripheral operating requirements and behaviors
Table 21. Flash command timing specifications (continued)
Symbol Description
Min.
Typ.
Program Partition for EEPROM execution time
t_pgmpart64k
t_pgmpart256k
• 64 KB FlexNVM
• 256 KB FlexNVM
—
138
—
145
Set FlexRAM Function execution time:
t_setramff
• Control Code 0xFF
—
70
t_setram32k
t_setram64k
t_setram256k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 256 KB EEPROM backup
—
0.8
—
1.3
—
4.5
Byte-write to FlexRAM for EEPROM operation
t_eewr8bers Byte-write to erased FlexRAM location execution
—
175
time
Byte-write to FlexRAM execution time:
t_eewr8b32k
• 32 KB EEPROM backup
—
385
t_eewr8b64k
t_eewr8b128k
t_eewr8b256k
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
475
—
650
—
1000
Word-write to FlexRAM for EEPROM operation
t_eewr16bers Word-write to erased FlexRAM location
execution time
—
175
Word-write to FlexRAM execution time:
t_eewr16b32k
• 32 KB EEPROM backup
—
385
t_eewr16b64k
t_eewr16b128k
t_eewr16b256k
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
475
—
650
—
1000
Longword-write to FlexRAM for EEPROM operation
t_eewr32bers Longword-write to erased FlexRAM location
execution time
—
360
Longword-write to FlexRAM execution time:
t_eewr32b32k
t_eewr32b64k
t_eewr32b128k
t_eewr32b256k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
630
—
810
—
1200
—
1900
Max.
—
—
—
1.2
1.9
5.5
260
1800
2000
2400
3200
260
1800
2000
2400
3200
540
2050
2250
2675
3500
Unit
ms
ms
μs
ms
ms
ms
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
Notes
3
K60 Sub-Family Data Sheet, Rev. 1, 6/2012.
34
Preliminary
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