K60P144M100SF2V2 Datasheet, PDF (35/80 Pages) Freescale Semiconductor, Inc – K60 Sub-Family

6.4.1.3
Peripheral operating requirements and behaviors
Flash high voltage current behaviors
Table 22. Flash high voltage current behaviors
Symbol Description
Min.
Typ.
Max.
Unit
I_{DD_PGM} Average current adder during high voltage
—
flash programming operation
2.5
6.0
mA
I_{DD_ERS} Average current adder during high voltage
—
flash erase operation
1.5
4.0
mA
6.4.1.4 Reliability specifications
Table 23. NVM reliability specifications
Symbol Description
Min.
Program Flash
t_nvmretp10k
t_nvmretp1k
n_nvmcycp
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Cycling endurance
5
20
10 K
Data Flash
t_nvmretd10k
t_nvmretd1k
n_nvmcycd
Data retention after up to 10 K cycles
5
Data retention after up to 1 K cycles
20
Cycling endurance
10 K
FlexRAM as EEPROM
t_nvmretee100 Data retention up to 100% of write endurance
5
t_nvmretee10 Data retention up to 10% of write endurance
20
Write endurance
n_nvmwree16
n_nvmwree128
n_nvmwree512
n_nvmwree4k
n_nvmwree32k
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio =
32,768
35 K
315 K
1.27 M
10 M
80 M
Typ.¹
50
100
50 K
50
100
50 K
50
100
175 K
1.6 M
6.4 M
50 M
400 M
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
years
years
cycles
years
years
cycles
years
years
writes
writes
writes
writes
writes
Notes
2
2
3
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ T_j ≤ 125°C.
3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and
typical values assume all byte-writes to FlexRAM.
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
K60 Sub-Family Data Sheet, Rev. 1, 6/2012.
Freescale Semiconductor, Inc.
Preliminary
35
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