S9S12G64F0CLF Datasheet, PDF (1231/1292 Pages) Freescale Semiconductor, Inc – Reference Manual and Data Sheet

Electrical Characteristics
Num C
Rating
Symbol
Min
8 D P-Flash sector erase time
9 D P-Flash phrase programming time
10 D EEPROM sector erase time
11 D EEPROM erase verify (blank check) time
(FTMRG240K2, TMRG192K2)
t_pera
—
t_ppgm
—
t_dera
—
t_dcheck
—
EEPROM erase verify (blank check) time
(FTMRG128K1, FTMRG96K1)
t_dcheck
—
EEPROM erase verify (blank check) time
(FTMRG64K1, FTMRG48K1)
t_dcheck
—
EEPROM erase verify (blank check) time
(FTMRG32K1, FTMRG16K1)
t_dcheck
—
12a D EEPROM one word programming time
t_dpgm1
—
12b D EEPROM two word programming time
t_dpgm2
—
1 _{Typical program and erase times are based on typical fNVMOP and maximum fNVMBUS}
2 _{Maximum program and erase times are based on minimum fNVMOP and maximum fNVMBUS}
3 _{tcyc = 1 / fNVMBUS}
4 _{Typical value for a new device}
Typ¹
20
185
5⁴
—
—
—
—
97
140
Max²
26
200
26
2620
2620
1540
1030
106
154
Unit³
ms
µs
ms
t_cyc
t_cyc
t_cyc
t_cyc
µs
µs
A.7.2 NVM Reliability Parameters
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The data retention and program/erase cycling failure rates are specified at the operating conditions noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
Freescale Semiconductor
MC9S12G Family Reference Manual, Rev.1.23
1233