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| MC9S12DT256_06 Datasheet, PDF (105/132 Pages) Freescale Semiconductor, Inc – Device User Guide V03.07 | |||
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MC9S12DT256 Device User Guide V03.07
3. Maximum Erase and Programming times are achieved under particular combinations of fNVMOP and bus frequency fbus.
Refer to formulae in Sections A.3.1.1 - A.3.1.4 for guidance.
4. Burst Programming operations are not applicable to EEPROM
5. Minimum Erase times are achieved under maximum NVM operating frequency fNVMOP.
6. Minimum time, if first word in the array is not blank
7. Maximum time to complete check on an erased block
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