NT5DS64M4AT Datasheet, PDF (59/78 Pages) List of Unclassifed Manufacturers – 256Mb Double Data Rate SDRAM

NT5DS64M4AT NT5DS64M4AW
NT5DS32M8AT NT5DS32M8AW
256Mb Double Data Rate SDRAM
Electrical Characteristics & AC Timing for DDR266/DDR200 - Absolute Specifications
(0 °C ≤ T_A ≤ 70 °C; V_DDQ = 2.5V ± 0.2V; V_DD = 2.5V ± 0.2V, See AC Characteristics) (Part 2 of 2)
Symbol
Parameter
t_IPW
t_RPRE
t_RPST
t_RAS
t_RC
t_RFC
Input pulse width
Read preamble
Read postamble
Active to Precharge command
Active to Active/Auto-refresh command period
Auto-refresh to Active/Auto-refresh
command period
DDR266A
(-7K)
Min
Max
2.2
0.9
1.1
0.40
0.60
45
120,000
65
75
DDR266B
(-75B)
Min
Max
2.2
0.9
1.1
0.40
0.60
45
120,000
65
75
DDR200
(-8B)
Min
Max
Unit Notes
ns 2-4, 12
0.9
1.1
t_CK 1-4
0.40
0.60 t_CK 1-4
50 120,000 ns 1-4
70
ns 1-4
80
ns 1-4
t_RCD Active to Read or Write delay
20
20
20
ns 1-4
t_RAP Active to Read Command with Autoprecharge
20
20
20
ns 1-4
t_RP Precharge command period
20
20
20
ns 1-4
t_RRD Active bank A to Active bank B command
15
15
15
ns 1-4
t_WR Write recovery time
15
15
15
ns 1-4
t_DAL
Auto precharge write recovery
+ precharge time
(t_WR/t_CK)
+
(t_RP/t_CK)
(t_WR/t_CK)
+
(t_RP/t_CK)
(t_WR/t_CK)
+
(t_RP/t_CK)
t_CK 1-4,13
t_WTR Internal write to read command delay
1
1
1
t_CK 1-4
t_XSNR Exit self-refresh to non-read command
75
75
80
ns 1-4
t_XSRD Exit self-refresh to read command
200
200
200
t_CK 1-4
t_REFI Average Periodic Refresh Interval
7.8
7.8
7.8
µs 1-4, 8
REV 1.1
12/2001
59
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