NT5DS64M4AT Datasheet, PDF (53/78 Pages) List of Unclassifed Manufacturers – 256Mb Double Data Rate SDRAM

NT5DS64M4AT NT5DS64M4AW
NT5DS32M8AT NT5DS32M8AW
256Mb Double Data Rate SDRAM
Normal Strength Driver Pulldown and Pullup Characteristics
1. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the
outer bounding lines of the V-I curve.
2. It is recommended that the “typical” IBIS pulldown V-I curve lie within the shaded region of the V-I curve.
Normal Strength Driver Pulldown Characteristics
140
Maximum
Typical High
Typical Low
Minimum
0
0
2.7
V_OUT (V)
3. The full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the
outer bounding lines of the V-I curve.
4. It is recommended that the “typical” IBIS pullup V-I curve lie within the shaded region of the V-I curve.
Normal Strength Driver Pullup Characteristics
0
Minimum
Typical Low
Typical High
-200
0
V_OUT (V)
Maximum
2.7
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device
drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the “typical” IBIS pullup to “typical”IBIS pulldown current should be unity + 10%, for device
drain to source voltages from 0.1 to 1.0. This specification is a design objective only. It is not guaranteed.
7. These characteristics are intended to obey the SSTL_2 class II standard.
8. This specification is intended for DDR SDRAM only.
REV 1.1
12/2001
53
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