ISD-T360SB Datasheet, PDF (26/109 Pages) List of Unclassifed Manufacturers – VoiceDSP Digital Speech Processor with Master/Slave, Full-Duplex Speakerphone, Multiple Flash and ARAM/DRAM Support

ISD-T360SB
1.3 SPECIFICATIONS
1—HARDWARE
1.3.1 ABSOLUTE MAXIMUM RATINGS
Storage temperature
Temperature under bias
All input and output
voltages with respect to
GND
–65˚C to +150˚C
0˚C to +70˚C
–0.5 V to +6.5 V
NOTE
Absolute maximum ratings indicate limits
beyond which permanent damage may
occur. Continuous operation at these limits
is not intended; operation should be limited
to the conditions specified below.
1.3.2 ELECTRICAL CHARACTERISTICS
T_A = 0ºC to +70ºC, V_CC = 5 V ±10% Or 3.3 V ±10%, GND = 0 V
Table 1-9: Electrical Characteristics—Preliminary Information
(All Parameters with Reference to V_CC = 3.3 V)
Symbol
Parameter
C_X
I_CC1
X1 and X2 Capacitance¹
Active Supply Current
I_CC2
Standby supply current
I_CC3
I_L
I_O (Off)
t_CASa
t_CASh
t_CASia
t_CASLw
t_DWEa
t_DWEh
t_DWEia
t_RASa
t_RASh
t_RASia
t_RASLw
t_RLCL
t_WRa
Power-down Mode Supply
Current
Input Load Current
Output Leakage Current
(I/O pins in Input Mode)
CAS Active
CAS Hold
CAS Inactive
DRAM, PDM, CAS Width
DWE Active
DWE Hold
DWE Inactive
RAS Active
RAS Hold
RAS Inactive
DRAM PDM, RAS Width
DRAM PDM RAS Low, after
CAS Low
WR0 Active
Conditions
Normal Operation Mode,
Running Speech Applications²
Normal Operation Mode, DSPM
Idle²
Power-down Mode^2,3
0 V ≤ V_IN ≤ V_CC
0 V ≤ V_OUT ≤ V_CC
After R.E. CTTL, T1 or T2W3
After R.E. CTTL
After R.E. CTTL, T3 or TERF
At 0.8 V, Both Edges
After R.E. CTTL, T2W2
After R.E. CTTL
After R.E. CTTL, T3
After R.E. CTTL, T2W1 or T2WRF
After R.E. CTTL
After R.E. CTTL, T3 or T3RF
At 0.8 V, Both Edges
F.E. CAS to F.E. RAS
After R.E. CTTL, T1
Min
–5.0
–5.0
0.0
600.0
0.0
200.0
200.0
Typ
17.0
40.0
30.0
Max
80.0
0.7
5.0
5.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
t_CTp/2+2
Units
pF
mA
mA
mA
µA
µA
1-18
Voice Solutions in Silicon^™