EP7312_05 Datasheet, PDF(24/64 Page) Cirrus Logic – High-performance, Low-power, System-on-chip with SDRAM & Enhanced with SDRAM & Enhanced

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EP7312_05 Datasheet, PDF (24/64 Pages) Cirrus Logic – High-performance, Low-power, System-on-chip with SDRAM & Enhanced with SDRAM & Enhanced

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EP7312

High-Performance, Low-Power System on Chip

Static Memory Burst Read Cycle

EXPCLK

nCS

nMWE

nMOE

HALF

WORD

EXPRDY

WRITE

tCSd

tAd

tAh

tCSh

tMOEd

tHWd

tMOEh

tWDd

tDs tDh

tWRd

tEXs

tEXh

Figure 9. Static Memory Burst Read Cycle Timing Measurement

Note: 1. Four cycles are shown in the above diagram (minimum wait states, 1-0-0-0). This is the maximum number of consecutive

cycles that can be driven. The number of consecutive cycles can be programmed from 2 to 4, inclusively.

2. The cycle time can be extended by integer multiples of the clock period (22 ns at 45 MHz, 27 ns at 36 MHz, 54 ns at

18.432 MHz, and 77 ns at 13 MHz), by either driving EXPRDY low and/or by programming a number of wait states. EXPRDY is

sampled on the falling edge of EXPCLK before the data transfer. If low at this point, the transfer is delayed by one clock period

where EXPRDY is sampled again. EXPCLK need not be referenced when driving EXPRDY, but is shown for clarity.

3. Consecutive reads with sequential access enabled are identical except that the sequential access wait state field is used to

determine the number of wait states, and no idle cycles are inserted between successive non-sequential ROM/expansion

cycles. This improves performance so the SQAEN bit should always be set where possible.

4. Address, Halfword, Word, and Write hold state until next cycle.

DS508F1

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