TA1318N Datasheet, PDF (20/41 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Characteristics
Delayed HD pulse width
HD1 output voltage
HD2 output voltage
HD1 output voltage (polarity inverse)
HD2 output voltage (polarity inverse)
AFC phase detection current
VCO oscillation start voltage
HD output pulse width
(free-run)
Symbol
W_d-HD
V13TH0
V13TL0
V13TH1
V13TL1
V13TH2
V13TL2
V13TH3
V13TL3
V15TH0
V15TL0
V15TH1
V15TL1
V15TH2
V15TL2
V15TH3
V15TL3
V13IH0
V13IL0
V13IH1
V13IL1
V13IH2
V13IL2
V13IH3
V13IL3
V15IH0
V15IL0
V15IH1
V15IL1
V15IH2
V15IL2
V15IH3
V15IL3
ID1
ID2
ID3
ID4
V_VCO
TH00
TH01
TH10
TH11
Test
Circuit
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TA1318N
Test Condition
Min Typ. Max Unit
(Note HA09) 1.0
1.2
1.4
µs
4.5
5.0
5.5

0.1
0.5
4.5
5.0
5.5

0.1
0.5

V
4.5
5.0
5.5

0.1
0.5
4.5
5.0
5.5

0.1
0.5
4.5
5.0
5.5

0.1
0.5
4.5
5.0
5.5

0.1
0.5

V
4.5
5.0
5.5

0.1
0.5
4.5
5.0
5.5

0.1
0.5
4.5
5.0
5.5

0.1
0.5
4.5
5.0
5.5

0.1
0.5

V
4.5
5.0
5.5

0.1
0.5
4.5
5.0
5.5

0.1
0.5
4.5
5.0
5.5

0.1
0.5
4.5
5.0
5.5

0.1
0.5

V
4.5
5.0
5.5

0.1
0.5
4.5
5.0
5.5

0.1
0.5
310 385 460
310 385 460
(Note HB01)
µA
520 650 780
520 650 780
(Note HB02) 3.9
4.2
4.5
V
1.4
1.8
2.2
1.4
1.8
2.2
(Note HB03)
µs
1.4
1.8
2.2
1.4
1.8
2.2
20
2003-02-19