TA1318N Datasheet, PDF (18/41 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Maximum Ratings (Ta = 25°C)
Characteristics
Supply voltage
Input pin signal voltage
Power dissipation
Power dissipation reduction rate
Operating temperature
Storage temperature
Note: Refer to the figure below.
Symbol
V_CCmax
e_inmax
P_D (*1)
1/Qja
T_opr
T_stg
Rating
12
9
1250
−10
−20~65
−55~150
Unit
V
V_p-p
mW
mW/ C
C
C
1250
10 mW/°C
850
TA1318N
0
0
25
65
150
Ambient temperature Ta (°C)
Figure P_D - Ta Curve
Operating Condition
Characteristics
Description
Power supply voltage (V_CC)
HD1, HD2, HD3 Input level
Pin 8
Pin 3, 1, 11
VD1, VD2, VD3 Input level
Pin 4, 2, 10
HD3 input width
Synchronization Pin 11
Frequency
detection
Pin 11
VD3 input width
Synchronization Pin 10
Frequency
detection
Pin 10
SYNC1, SYNC2 Input level
Pin 21, 19, white 100% with negative sync
HD1, HD2, VD1, VD2-OUT
Input current
Pin 13, 15, 22, 23
DAC3 Input current
Pin 24
Address switching voltage
Pin 18
D8/D9_H
DC/DD_H
Min Typ. Max Unit
8.5
9.0
9.5
V
2.0
5.0
9.0
V_p-p
2.0
5.0
9.0
0.02 
0.20
H
0.45
µs
 0.25H 
1 µs

47H

1

400
µs
0.9
1.0
1.1
V_p-p

0.9
1.5
mA

0.5
1.0
0
0
1.0
V
8.0
9.0
9.0
18
2003-02-19