TA1318N Datasheet, PDF (19/41 Pages) Toshiba Semiconductor – TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Electrical Characteristics (V_CC = 9 V, Ta = 25°C, unless otherwise specified)
Current Dissipation
Pin Name
V_CC
Symbol
Test
Circuit
Min
Typ.
Max
Unit
I_CC

32
38
44
mA
TA1318N
AC Characteristics
Horizontal Block
Characteristics
Sync1/2 input horizontal sync phase
HD3 input horizontal sync phase
Polarity distinction active range
Sync1 input threshold amplitude
Sync2 input threshold amplitude
HD3 input threshold amplitude
(Synchronization block)
HD1 input threshold voltage
HD2 input threshold voltage
HD3 input threshold voltage
(SW block)
HD output phase adjustment variable
range
Clamp pulse phase/width/level
Symbol
S_1PH
S_2PH
HD_3PH
HD-_DUTY1
HD-_DUTY2
V_thS10
V_thS11
V_thS12
V_thS13
V_thS20
V_thS21
V_thS22
V_thS23
Test
Circuit













V_thHD3

V_thHD1

V_thHD2

V_thHD3

∆HP0−

∆HP0+

∆HP1−

∆HP1+

∆HP2−

∆HP2+

∆HP3−

∆HP3+

CP_S0

CP_W0

CP_V0

CP_S1

CP_W1

CP_V1

CP_S3

CP_W3

CP_V3

19
Test Condition
Min Typ. Max Unit
0.6
0.7
0.8
(Note HA01)
µs
0.6
0.7
0.8
(Note HA02) 0.6
0.7
0.8
µs
61
66
71
(Note HA03)
%
48
53
58
0.040 0.070 0.100
0.060 0.106 0.152
0.081 0.142 0.203
0.102 0.178 0.255
(Note HA04)
V_p-p
0.040 0.070 0.100
0.060 0.106 0.152
0.081 0.142 0.203
0.102 0.178 0.255
(Note HA05) 0.65 0.75 0.85 V_p-p
0.65 0.75 0.85
(Note HA06) 0.65 0.75 0.85 V_p-p
0.65 0.75 0.85
2.86 3.18 3.49
2.86 3.18 3.49
1.43 1.59 1.75
1.43 1.59 1.75
(Note HA07)
µs
1.33 1.48 1.63
1.33 1.48 1.63
1.00 1.11 1.22
1.00 1.11 1.22
0.85 1.00 1.15
µs
0.65 0.80 0.95
4.7
5.0
5.3
V
0.35 0.50 0.65
µs
(Note HA08) 0.65 0.80 0.95
4.7
5.0
5.3
V
0

1
µs
0.50 0.90 1.30
4.7
5.0
5.3
V
2003-02-19