LMG3410 Datasheet, PDF (6/33 Pages) Texas Instruments – 600-V 12-A Single Channel GaN Power Stage

LMG3410
SNOSD10A – APRIL 2016 – REVISED JUNE 2016
www.ti.com
6.6 Switching Characteristics
over operating free-air temperature range, 9.5 V < V_DD < 18 V, V_NEG = -14 V, V_BUS = 400 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
UNIT
GaN FET
dv/dt
Δdv/dt
dv/dt
Turn-on Drain Slew Rate
Slew Rate Variation
Edge Rate Immunity
R_DRV = 15 kΩ
R_DRV = 40 kΩ
R_DRV = 100 kΩ
turn on, I_L = 5 A, R_DRV = 40 kΩ
Drain dv/dt, device remains off
inductor-fed, max di/dt = 10 A/ns
100
50
25
25%
150
V/ns
V/ns
STARTUP
t_START
DRIVER
Startup Time, V_IN rising above UVLO
Time until gate responds to IN C_NEG
= 2.2 µF, C_LDO = 1 µF
2
ms
t_pd,on
t_delay,on
Propagation delay, turn on
Turn on delay time
IN rising to I_DS > 10 mA, V_DS = 100 V
R_DRV = 40 kΩ, V_NEG = -14 V
I_DS > 1 A to V_DS < 320 V, R_DRV = 40
kΩ
20
ns
12
ns
t_rise
t_pd,off
t_fall
FAULT
Rise Time
Propagation delay, turn off
Fall Time
V_DS = 320 V to V_DS = 80 V, I_D = 5 A
IN falling to V_DS > 10 V; I_D = 5 A
V_DS = 80 V to V_DS = 320 V, I_D = 5 A
4.2
ns
36
ns
15
ns
t_curr
t_blank
t_reset
Current Fault Delay
Current Fault Blanking Time
Fault reset time
I_DS > I_TH to FAULT low
IN held low
50
ns
20
ns
350
µs
6
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