LMG3410 Datasheet, PDF (5/33 Pages) Texas Instruments – 600-V 12-A Single Channel GaN Power Stage

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LMG3410
SNOSD10A – APRIL 2016 – REVISED JUNE 2016
6.5 Electrical Characteristics
over operating free-air temperature range, 9.5 V < V_DD < 18 V, LPM = 5 V, V_NEG = -14 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
GaN POWER TRANSISTOR
R_DS,ON
V_SD
I_DSS
C_oss
C_oss,er
Total On-state Resistance
Third-quadrant mode source-drain
voltage
Drain Leakage Current
GaN output capacitance
Effective output capacitance, energy
related
T_J = 25°C
T_J = 150°C
IN = 0 V, I_SD = 0.1 A
IN = 0 V, I_SD = 10 A
V_DS = 600 V, T_J = 25°C
V_DS = 600 V, T_J = 150°C
IN = 0 V, V_DS = 400 V, f_SW = 250 kHz
IN = 0 V, V_DS =0-400 V
70
135
5
7.8
1
5
10
71
95
C_oss,tr
Effective output capacitance, time
related
I_D = 5 A, IN = 0 V, V_DS = 0-400 V
145
Q_rr
Reverse recovery charge
V_R = 400 V, I_SD = 5 A, dI_SD/dt = 1 A/ns
0
DRIVER SUPPLY
I_VDD,LPM
I_VDD,Q
Quiescent current, ultra-low-power
mode
Quiescent current (average)
V_LPM = 0 V, V_DD = 12 V, T_J = 25°C
T_J = 150°C
Transistor held off
Transistor held on
80
125
125
0.7
0.7
I_VDD,op
Operating current
V_DD = 12 V, f_SW = 1 MHz, R_DRV=40
kΩ, 50% duty cycle
43
V_+5V
5V LDO output voltage
V_NEG
Negative Supply
BUCK-BOOST CONVERTER
V_DD = 12 V
30-mA load current
4.7
5.3
-13.9
f_SW,DCDC
I_DCDC,PK
DC-DC switching frequency
Peak inductor current
I_OUT = 20 mA
I_OUT = 20 mA, V_IN = 12 V, V_OUT = -14
V
1
250
350
ΔV_NEG
η_DCDC
DC-DC output ripple voltage, pk-pk
DC-DC converter efficiency
C_NEG = 1 µF, I_OUT = 20 mA
I_OUT = 20 mA, V_IN = 12 V, V_NEG = -14
V
200
75%
DRIVER INPUT
V_IH
Input pin, LPM pin, logic high
threshold
2.5
V_IL
Input pin, LPM pin, low threshold
V_HYST
Input pin, LPM pin, hysteresis
R_IN,L
Input pull-down resistance
R_LPM
LPM pin pull-down resistance
UNDERVOLTAGE LOCKOUT
0.8
0.8
150
150
V_DD,UVLO
ΔV_DD,UVLO
FAULT
Under-voltage Lockout
UVLO Hysteresis
Turn-on voltage
8.6
9.4
500
I_trip
T_trip
T_tripHys
Current Fault Trip Point
Temperature Trip Point
Temperature Trip Hysteresis
Trip point
24
36
50
165
20
UNIT
mΩ
V
µA
pF
pF
pF
nC
µA
mA
mA
V
V
MHz
mA
mV
V
V
V
kΩ
kΩ
V
mV
A
°C
°C
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