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LMG3410 Datasheet, PDF (14/33 Pages) Texas Instruments – 600-V 12-A Single Channel GaN Power Stage
LMG3410
SNOSD10A – APRIL 2016 – REVISED JUNE 2016
9 Application and Implementation
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NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The LMG3410 is a single-channel GaN power stage targeting high-voltage applications. It targets hard-switched
and soft-switched applications running from a 350 V to 480 V bus such as power-factor correction (PFC)
applications. As GaN devices such as the LMG3410 have zero reverse-recovery charge, they are well-suited for
hard-switched half-bridge applications, such as the totem-pole bridgeless PFC circuit. It is also well-suited for
resonant DC-DC converters, such as the LLC and phase-shifted full-bridge. As both of these converters utilize
the half-bridge building block, this section will describe how to use the LMG3410 in a half-bridge configuration.
9.2 Typical Application
PWM_H
FAULT_H
5V
1 VCC1
VCC2 16
3 INA
OUTA 14
R2
4 INB
OUTB 13
10
5 OUTC
INC 12
C8
68 pF
6
C9 7
1 uF
2
8
NC
EN1
GND1
GND1
NC 11
EN2 10
GND2 15
GND2 9
AGND AGND
U2
ISO7831FDWR
PWM_L
FAULT_L
5V
1 VCC1
VCC2 16
3 INA
OUTA 14
R7
4 INB
OUTB 13
10
5 OUTC
INC 12
C18
68 pF
6
C19 7
1 uF
2
8
NC
EN1
GND1
GND1
NC 11
EN2 10
GND2 15
GND2 9
AGND AGND
U4
ISO7831FDWR
R3
10
C10
0.1 uF
R5
20
C6
1 uF
C11
68 pF R4
39 k
U1
27 VDD
25 LDO5V
C7
0.47 µF
R1
10.0 k
L1
22 µH
31 IN
32 FAULT
29 LPM
30 RDRV
28 BBSW
26 VNEG
17
C12
2.2 uF 24
NC
GND
LMG3410RWH
DRAIN 1
DRAIN 2
DRAIN 3
DRAIN 4
DRAIN 5
DRAIN 6
DRAIN 7
DRAIN 8
DRAIN 9
DRAIN 10
DRAIN 11
SOURCE 12
SOURCE 13
SOURCE 14
SOURCE 15
SOURCE 16
SOURCE 18
SOURCE 19
SOURCE 20
SOURCE 21
SOURCE 22
SOURCE 23
PAD 33
D1
UFM15PL-TP
12V
U3
27 VDD
25 LDO5V
C20
0.1 uF
C16
1uF
R8
10
C21 68 pF
R9
R10
68.1 k 100 k
Q1
C17
0.47µF
R6
10.0k
L3
22 µH
31 IN
32 FAULT
29 LPM
30 RDRV
28 BBSW
26 VNEG
17
C22
2.2 uF 24
NC
GND
LMG3410RWH
DRAIN 1
DRAIN 2
DRAIN 3
DRAIN 4
DRAIN 5
DRAIN 6
DRAIN 7
DRAIN 8
DRAIN 9
DRAIN 10
DRAIN 11
SOURCE 12
SOURCE 13
SOURCE 14
SOURCE 15
SOURCE 16
SOURCE 18
SOURCE 19
SOURCE 20
SOURCE 21
SOURCE 22
SOURCE 23
PAD 33
HV_BUS
C2
0.01 µF
C3
0.01 µF
C4
0.01 µF
C5
0.01 µF
1206
630 V
C1
100 µF
PGND
L2
220 µH
PFC_INPUT
C13
0.1 µF
630 V
C14
0.1 µF
630 V
C15
0.47 µF
PGND
Figure 11. Typical Half-Bridge Application
PGND
Copyright © 2016, Texas Instruments Incorporated
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