LMG3410 Datasheet, PDF (11/33 Pages) Texas Instruments – 600-V 12-A Single Channel GaN Power Stage

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8 Detailed Description
LMG3410
SNOSD10A – APRIL 2016 – REVISED JUNE 2016
8.1 Overview
LMG3410 is a high-performance 600-V GaN transistor with integrated gate driver. The GaN transistor provides
ultra-low input and output capacitance and zero reverse recovery. The lack of reverse recovery enables efficient
operation in half-bridge and bridge-based topologies.
TI utilizes a Direct Drive architecture to control the GaN FET within the LMG3410. When the driver is powered
up, the GaN FET is controlled directly with the integrated gate driver. This architecture provides superior
switching performance compared with the traditional cascode approach.
The integrated driver solves a number of challenges using GaN devices. The LMG3410 contains a driver
specifically tuned to the GaN device for fast driving without ringing on the gate. The driver ensures the device
stays off for high drain slew rates up to 150 V/ns. In addition, the integrated driver protects against faults by
providing over-current and over-temperature protection. This feature can protect the system in case of a device
failure, or prevent a device failure in the case of a controller error or malfunction.
8.2 Functional Block Diagram
DRAIN
VDD
LDO5V
FAULT
IN
GND
BBSW
LPM
LDO
UVLO
(+5 V, VDD, VNEG)
Level Shift
Buck-Boost
Controller
OCP
OTP
GaN
VNEG
RDRV
SOURCE
Copyright © 2016, Texas Instruments Incorporated
Copyright © 2016, Texas Instruments Incorporated
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