LMG5200_15 Datasheet, PDF (8/23 Pages) Texas Instruments – GaN TECHNOLOGY PREVIEWLMG5200 80-V, GaN Half-Bridge Power Stage

LMG5200
SNOSCY4A – MARCH 2015 – REVISED MARCH 2015
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7 Parameter Measurement Information
7.1 Propagation Delay and Mismatch Measurement
Figure 5 shows the typical test setup used to measure the propagation mismatch. As the gate drives are not
accessible, pull-up and pull-down resistors in this test circuit are used to indicate when the low-side GaN FET
turns ON and the high-side GaN FET turns OFF and vice versa to measure the t_MON and t_MOFF parameters.
Resistance values used in this circuit for the pull-up and pull-down resistors are in the order of 1 kΩ, the current
sources used are 2 A.
Figure 6 through Figure 8 show propagation delay measurement waveforms. For turn-on propagation delay
measurements, the current sources are not used. For turn-off time measurements, the current sources are set to
2 A and a voltage clamp limit is also set, referred to as VIN_(CLAMP). When measuring the high-side component
turn-off delay, the current source across the high-side FET is turned on, the current source across the low-side
FET is off, HI transitions from high-to-low and output voltage transitions from V_IN to V_IN(CLAMP). Similarly for low-
side component turn-off propagation delay measurements, the high-side component current source is turned off
and the low-side component current source is turned on, LI transitions from high to low and the output transitions
from GND potential to V_IN(CLAMP). The time between the transition of LI and the output change is the propagation
delay time.
Pattern
Generator
3
2
HS
HB
VIN 1
4 HI
5 LI
LMG5200 ^{SW 8}
V_OUT
VCC
6
PGND 9
AGND
7
(A)
Delay Measurement
Figure 5. Propagation Delay and Propagation Mismatch Measurement
8
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