LMG5200_15 Datasheet, PDF (12/23 Pages) Texas Instruments – GaN TECHNOLOGY PREVIEWLMG5200 80-V, GaN Half-Bridge Power Stage

LMG5200
SNOSCY4A – MARCH 2015 – REVISED MARCH 2015
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Feature Description (continued)
where
• t_TR is the switch transition time from ON to OFF and from OFF to ON
(4)
Note that the low-side FET does not suffer from this loss. The third quadrant loss in the low-side device is
ignored in this first order loss calculation.
The sum of the driver loss, the bootstrap diode loss and the switching and conduction losses in the GaN FETs is
the total power loss of the device. Careful board layout with an adequate amount of thermal vias close to the
power pads (VIN, SW and GND) allows optimum power dissipation from the package. A top-side mounted heat
sink with airflow can also improve the package power dissipation.
12
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