LMG5200_15 Datasheet, PDF (1/23 Pages) Texas Instruments – GaN TECHNOLOGY PREVIEWLMG5200 80-V, GaN Half-Bridge Power Stage

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LMG5200
SNOSCY4A – MARCH 2015 – REVISED MARCH 2015
GaN TECHNOLOGY PREVIEW
LMG5200 80-V, GaN Half-Bridge Power Stage
1 Features
•1 Input Voltage up to 80-V DC
• Integrated 80-V, 18-mΩ, GaN FETs
• Optimized Pinout for Easy PCB Layout
• Internal Bootstrap Supply Voltage Clamping to
Prevent GaN FET Overdrive
• Supply Rail Undervoltage Lockout
• Independent High-Side and Low-Side TTL Logic
Inputs
• Fast Propagation Times (29.5 ns Typical)
• Excellent Propagation Delay Matching (2 ns
Typical)
• Low Power Consumption
2 Applications
• Multi MHz Synchronous Buck Converters
• Class D Amplifiers for Audio
• 48-V Point-of-Load (POL) Converters for
Industrial, Computing and Telecom
3 Description
The LMG5200 device, a 80-V driver, GaN half-bridge
power stage, provides an integrated power stage
solution using enhancement-mode Gallium Nitride
(GaN) FETs. The device consists of two, 80-V GaN
FETs driven by one high-frequency GaN FET driver
in a half-bridge configuration.
The TTL logic compatible inputs can withstand input
voltages up to 14 V regardless of the VCC voltage.
The proprietary bootstrap voltage clamping technique
ensures the gate voltages of the enhancement mode
GaN FETs are within a safe operating range. GaN
FETs provide significant advantages for power
conversion as they have near zero reverse recovery
and very small input capacitance C_ISS. All the devices
are mounted on a completely bond-wire-free package
platform with minimized package parasitic elements.
The LMG5200 device is available in a 6 mm x 8 mm
x 2 mm lead free package and can be easily mounted
on PCBs.
The device extends advantages of discrete GaN
FETs by offering a more user-friendly interface. It is
an ideal solution for applications requiring high-
frequency, high-efficiency operation in a small form
factor. It reduces the board requirements for
maintaining clearance and creepage requirements for
medium voltage GaN applications while minimizing
the loop inductances to ensure fast switching.
PART NUMBER
LMG5200
Device Information⁽¹⁾
PACKAGE
BODY SIZE (NOM)
QFN (9) 6.00 mm × 8.00 mm × 2.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
LMG5200
Simplified Application
HS
HB
3
2
1 VIN
HI 4
LI 5
HS
HI
HB
HO
GaN Driver
LI
VCC
LO
AGND
8 SW
9 PGND
6
7
VCC
AGND
1
An IMPORTANT NOTICE at the end of this document addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. GaN TECHNOLOGY PREVIEW Information. Product in design phase of
development. Subject to change or discontinuance without notice.