LMG5200_15 Datasheet, PDF (18/23 Pages) Texas Instruments – GaN TECHNOLOGY PREVIEWLMG5200 80-V, GaN Half-Bridge Power Stage

LMG5200
SNOSCY4A – MARCH 2015 – REVISED MARCH 2015
12 Device and Documentation Support
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12.1 Device Support
12.1.1 Development Support
LMG5200 PSpice Transient Model
LMG5200 TINA-TI Transient Reference Design
12.2 Documentation Support
12.2.1 Related Documentation
Layout Guidelines for LMG5200 GaN Power Stage Module (SNVA729)
Using the LMG5200: GaN Half-Bridge Power Module Evaluation Module (SNVU461)
12.3 Trademarks
All trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
13.1 Package Information
The LMG5200 device package is rated as a MSL3 package (Moisture Sensitivity Level 3). Please refer to
application report SNOA550 for specific handling and process recommendations of a MSL3 package.
Figure 20 and Figure 21 show preliminary packaging information for the device.
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