LMG5200_15 Datasheet, PDF (5/23 Pages) Texas Instruments – GaN TECHNOLOGY PREVIEWLMG5200 80-V, GaN Half-Bridge Power Stage

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6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SUPPLY CURRENTS
I_VCC
I_CCO
I_HB
VCC quiescent current
VCC operating current
Total HB quiescent current
I_HBO
Total HB operating current
INPUT PINS
LI = HI = 0 V, V_VCC = 5 V
f = 500 kHz
LI = HI = 0 V, V_VCC = 5 V
f = 500 kHz, 50% Duty cycle,
V_DD = 5 V
V_IH
V_IL
V_HYS
High-level input voltage
Rising edge
Low-level input voltage
Falling edge
Hysteresis between rising and falling
threshold
R_I
Input pull-down resistance
UNDERVOLTAGE PROTECTION
V_VCC
V_VCC(hyst)
VCC rising edge threshold
Rising
Hysteresis between falling and rising
edge
V_HB
HB rising edge threshold
Rising
HB hysteresis between rising edge
and falling edge
BOOTSTRAP DIODE
V_DL
Low-current forward voltage
V_DH
High-current forward voltage
R_D
Dynamic resistance
HB-HS clamp
I_VDD-HB = 100 µA
I_VDD-HB = 100 mA
Regulation voltage
t_BS
Bootstrap diode reverse recovery
time
I_F = 100 mA, I_R = 100 mA
Q_RR
Bootstrap diode reverse recovery
charge
V_VIN = 50 V
POWER STAGE
R_DS(on)HS
R_DS(on)LS
V_SD
I_L-VIN-SW
High-side GaN FET on-resistance
Low-side GaN FET on-resistance
GaN 3rd quadrant conduction drop
Leakage between VIN to SW when
the high-side GaN FET and low-side
GaN FET are off
I_OUT = 5 A, V_VCC = 5 V, T_J = 25ºC
I_OUT = 5 A, V_VCC = 5 V, T_J = 25ºC
I_SD = 500 mA, VIN floating,
V_VCC = 5 V, HI, LI low
V_IN = 80 V, (HI = LI = 0 V)
V_VCC = 5 V, T_J = 25ºC
I_L-SW-GND
C_OSS
Leakage between SW and GND
when the high-side GaN FET and
low-side GaN FET are off
Output capacitance of high-side
GaN FET and low-side GaN FET
V_SW = 80 V, HI , LI = 0 V, V_VCC = 5
V,
T_J = 25ºC
V_DS = 50 V, V_GS = 0 V
(HI = LI = 0 V)
Q_G
Q_OSS
Q_RR
Total gate charge
Output charge
Source to drain reverse recovery
charge
V_DS = 50 V, I_D = 10 A, V_GS = 5 V
V_DS = 50 V, I_D = 10 A
Not including internal driver
bootstrap diode
LMG5200
SNOSCY4A – MARCH 2015 – REVISED MARCH 2015
MIN
TYP
MAX UNIT
0.07
0.1 mA
3.0
5.0 mA
0.09
0.120 mA
1.5
2 mA
1.89
2.06
2.18
V
1.48
1.66
1.76
V
400
mV
100
200
300
kΩ
3.2
3.8
185
2.7
3.2
185
4.5
V
mV
3.7
V
mV
0.45
0.65
V
0.9
1.0
V
1.6
2.8
Ω
4.7
5
5.3
V
40
ns
2
nC
14
18 mΩ
14
18 mΩ
2
V
25
150
µA
25
150
µA
225
280
pF
3.8
nC
20
nC
0
nC
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